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Semiconductor
THN405Z
SiGe NPN Transistor
SOT-343
Unit in mm
Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
1
3
Features
- High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz - Low noise figure NF = 1.4 dB at VCE = 2 V, IC = 2 mA, f = 1.8 GHz
2 4
Pin Configuration
1. Base 2. Emitter 3. Emitter 4. Collector
Absolute Maximum Ratings ( TA = 25 )
Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 10 4.5 1.5 25 75 150 -65 ~ 150 Unit V V V mA mW
Caution : Electro Static Discharge sensitive device
1
THN405Z
Electrical Characteristics ( TA = 25 )
Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 9 V, IE = 0 mA VCE = 3 V, IB = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 5 mA VCE = 2 V, IC = 10 mA VCE = 3 V, IC = 15 mA Maximum Available Gain MAG VCE = 2 V, IC = 5 mA, f = 1.0 GHz VCE = 2 V, IC = 5 mA, f = 1.8 GHz Insertion Power Gain |S21|2 VCE = 2 V, IC = 5 mA, f = 1.0 GHz VCE = 2 V, IC = 5 mA, f = 1.8 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 2 V, IC = 2 mA, f = 1.8 GHz VCB = 2 V, IE = 0 mA, f = 1 MHz Min. 50 15 16 21 18 16 13 Typ. 17 19 23 20 18 15 1.4 0.07 Max. 1.0 1.0 0.5 260 2.0 GHz GHz dB dB dB dB dB pF Unit
hFE Classification
Marking hFE Value BF1 50 - 150 BF2 130 - 260
2
THN405Z
Typical Characteristics ( TA = 25 , unless otherwise specified )
Power Dissipation vs. Ambient Temperature
Reverse Transfer Capacitance, Cre (pF)
100
Collector to Base Capacitance vs. Collector to Base Voltage
0.30 f = 1 MHz 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 4 5
Total Power Dissipation, PC (mW)
80
60
40
20
0 0 25 50 75 100 125
o
150
Ambient Temperature, TA ( C)
Collector to Base Voltage, VCB (V)
DC Current Gain vs. Collector Current
400 VCE = 3 V
20
Collector Current vs. Base to Emitter Voltage
VCE = 3 V
Collector Current, IC (mA)
1 10 30
15
DC Current Gain, hFE
100
10
50
5
10 0.1
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, IC (mA)
Base to Emitter Voltage, VBE (V)
3
THN405Z
Collector Current vs. Collector to Emitter Voltage
20 18 30
Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product, fT (GHz)
Collector Current, IC (mA)
16 14 12 10 8 6 4 2 0 0 1 2 3 4
IIB = 30 uA B
25 20 15 10 VCE = 2 V VCE = 3 V
II = 120 B = 120 uA B IB = 90 uA B
IIB = 60 uA B = 60
5 0 0 5 10 15 20 25 30
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
Maximum Available Gain vs. Collector Current
35 30
Insertion Power Gain vs. Collector Current
Maximum Available Gain, MAG (dB)
30 f = 1 GHz 25 20 15 10 5 0 1 10 100 f = 1.8 GHz VCE = 2 V VCE = 3 V VCE = 2 V VCE = 3 V
Insertion Power Gain, |S21| (dB)
25 f = 1 GHz 20 VCE = 3 V VCE = 2 V VCE = 3 V f = 1.8 GHz VCE = 2 V 10 5 0 1 10 100
2
15
Collector Current, IC (mA)
Collector Current, IC (mA)
4
THN405Z
Power Gain vs. Frequency
40 35 30 VCE = 2 V IC = 5 mA 40 35 30 VCE = 3 V IC = 5 mA
Gain (dB)
Gain (dB)
25 20
MSG
25 20 15 10 5 0 0.0
MSG
MAG 15 10 5 0 0.0 |S21|
2
MAG |S21|
2
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Collector Current
at VCE = 2 V, IC =parameters, ZS = ZSopt
4.0 3.5
Noise Figure, NF (dB)
3.0 2.5 f = 1.8 GHz 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 f = 0.9 GHz
Collector Current, IC (mA)
5

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